hzo fram sram macro Search Results


hzo fram sram macro  (Sony)
90
Sony hzo fram sram macro
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Hzo Fram Sram Macro, supplied by Sony, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/hzo fram sram macro/product/Sony
Average 90 stars, based on 1 article reviews
hzo fram sram macro - by Bioz Stars, 2026-04
90/100 stars
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Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: Summary of top metrics from the detailed company information in the text.

Article Snippet: At VLSI 2024, Sony researchers presented an HZO FRAM SRAM macro, again in collaboration with NaMLab, and with the Fraunhofer IPMS.

Techniques:

World Intellectual Property Organisation Patentscope search results from 2015 to July 2024 for the four included eNVM. The number of IP applications has been steadily increasing over the years. In line with Fig. , RRAM and MRAM are the frontrunner technologies, but the others are not far behind. Patentscope search settings were office = all, languages = en, stemming = FALSE, single family = FALSE, and including NPL = FALSE. Search terms for the individual eNVM technologies were as follows: ALLTXT:(“phase change random access memory”) or (“phase change RAM”), ALLTXT:(“ferroelectric RAM”) or (“ferroelectric random access memory”), ALLTXT:(“resistive random access memory”) or (“resistive RAM”), and ALLTXT:(“magnetoresistive RAM”) or (“magnetic RAM”) or (“magnetoresistive random access memory”) or (“magnetic random access memory”).

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: World Intellectual Property Organisation Patentscope search results from 2015 to July 2024 for the four included eNVM. The number of IP applications has been steadily increasing over the years. In line with Fig. , RRAM and MRAM are the frontrunner technologies, but the others are not far behind. Patentscope search settings were office = all, languages = en, stemming = FALSE, single family = FALSE, and including NPL = FALSE. Search terms for the individual eNVM technologies were as follows: ALLTXT:(“phase change random access memory”) or (“phase change RAM”), ALLTXT:(“ferroelectric RAM”) or (“ferroelectric random access memory”), ALLTXT:(“resistive random access memory”) or (“resistive RAM”), and ALLTXT:(“magnetoresistive RAM”) or (“magnetic RAM”) or (“magnetoresistive random access memory”) or (“magnetic random access memory”).

Article Snippet: At VLSI 2024, Sony researchers presented an HZO FRAM SRAM macro, again in collaboration with NaMLab, and with the Fraunhofer IPMS.

Techniques: